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AIST develops graphene conductivity control technique

27 Nov 2012

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Graphene

Scientists at the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), together with a NIMS team headed by Kazuhito Tsukagoshi, a MANA principal investigator at the NIMS International Centre for Materials Nanoarchitectonics, have developed a novel technique for controlling the electrical conductivity of graphene.

The team is headed by Shu Nakaharai, a designated intensive researcher at the Collaboration Research Team Green Nanoelectronics Centre (hereinafter, GNC; Leader: Naoki Yokoyama), Nanoelectronics Research Institute (Director: Seigo Kanemaru), National Institute of Advanced Industrial Science and Technology (hereinafter, AIST; President: Tamotsu Nomakuchi), and Shinichi Ogawa, an Invited Researcher at the Nanoelectronics Research Institute, AIST Innovation Centre for Advanced Nanodevices (Director: Hiroyuki Akinaga), in joint research with a team headed by Kazuhito Tsukagoshi, a MANA principal investigator at the International Centre for Materials Nanoarchitectonics (hereinafter, WPI-MANA; Director-General: Masakazu Aono), National Institute for Materials Science (hereinafter, NIMS; President: Sukekatsu Ushioda).

In the technique, a helium ion beam is irradiated on graphene using a helium ion microscope to artificially introduce a low concentration of crystal defects, and it becomes possible to modulate the movement of electrons and holes in the graphene by applying a voltage to the gate electrode. Although this phenomenon of conduction control by introduction of crystal defects had been predicted theoretically, there were no examples in which on/off operation at room temperature was achieved experimentally. It is possible to introduce the technique developed in this work in the existing framework of production technology, including large area wafers.




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