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MOS-Varactor model for CMOS mm-wave circuits dev't

18 Dec 2012

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Toshiba Corp. has revealed the development of a compact MOS-Varactor simulation model that according to the company delivers high level accuracy from DC to the millimetre wave (60GHz) region. The new model was developed in cooperation with Professor Nobuyuki Itoh of Okayama Prefectural University.

The compact MOS-Varactor model introduces an original algorithm to express scaling effects and can capture the impacts of parasitic effects that dominate in the 60GHz region. Measurement parameters from 1MHz to 60GHz for samples with different cell sizes were used for modelling.

The model's accurate capture of parasitic effects supports realisation of low power consumption in RF-CMOS products, and Toshiba will use it a basic technology for developing such chips, key devices of the company's Analog and Imaging IC Division. Building on the work done so far, Toshiba expects to secure accurate simulation of CMOS millimeter wave circuits in the future.


Toshiba MOS-Varactor


The model has been verified with samples with cell lengths ranging from 0.26-2.0µm formed with Toshiba's 65nm RF-CMOS technology. Very good accuracy for all cell sizes was achieved from DC to 67GHz, stated the company.

Verification of this model was made on a 60GHz circuit. Phase noise level dependency on the control voltage of the 60GHz VCO was measured and compared with a circuit simulation, with this model used in the frequency tuning block. Measurement accuracy was found to be 8dB better than with the conventional model, Toshiba added.




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