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EPC's dev board runs 200 V eGaN FETs, gate drivers

08 Feb 2013  | Steve Taranovich

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Gallium based power management devices manufacturer Efficient Power Conversion Corporation(EPC) has recently introduced an upgrade of a development board featuring enhancement mode gallium nitride (eGaN) FETs using Texas Instruments' UCC27611 dedicated GaN FET gate driver.

The EPC9004 board demonstrates how the recent introductions of IC gate drivers, optimised for eGaN FETs, make the task of transitioning from silicon FETs to eGaN technology devices simple and cost effective.

block diagram

Figure: Block diagram of the EPC9004 development board shown here.

This development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611�high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.

Proper measurement

Figure 2: Proper measurement of switch node get the true high speed waveform with a very short ground lead on the probe to minimise inductance and ringing effects

figure 2

Figure 3: The waveform for Vin = 150V to 5V/2A (100kHz) Buck converter

CH1: VPWM Input voltage; CH2: (Iout) Switch node current; CH4: (Vout) Switch node voltage.

The 200 V EPC2012 eGaN FET is ideal for use in applications such as wireless charging, magnetic resonance imaging (MRI), and low RF frequency applications such as smart meter communications.

Data sheet for the EPC9004 board can be found here.

- Steve Taranovich
  EE Times




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