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Dev't board touts 200V eGAN FET from EPC

20 Feb 2013

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 EPC9004

Efficient Power Conversion Corp. (EPC) has debuted the EPC9004 development board that features the company's enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). The company said the board shows makes the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.

The EPC9004 development board is a 200V peak voltage, 2A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from TI, cutting time and complexity for designing high frequency, high performance power systems, indicated the company.

The EPC9004 claims to simplify the evaluation process of high performance eGaN FETs by including all the critical components, including a dedicated gate driver, on a single 2 x 1.5in board that can be easily connected into any existing converter. In addition, there are various probe points on the board to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included for reference and ease of use.

The 200 V EPC2012 eGaN FET is geared for applications such as wireless charging, magnetic resonance imaging and low RF frequency applications such as smart meter communications.

The EPC9004 development board is priced at $95.




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