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EPAD MOSFETs tout flexibility in next gen mobile devices

18 Mar 2013

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 MOSFET

Advanced Linear Devices Inc. (ALD) has recently announced its latest small signal, low power MOSFETs which enable independent control of each device within a quad package. The company's latest update will provide circuit designers with unprecedented flexibility in developing next-generation energy harvesting systems and low-power mobile devices.

The ALD210800A/ALD210800 Precision N-Channel MOSFET arrays featuring Zero-Threshold Voltage establish has been touted to set new industry benchmarks for forward trans-conductance and output conductance. Designed with ALD's EPAD CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages.

The independent control of each device in the package will enable each MOSFET to be characterized with different input and output requirements. This further reduces size and weight in systems by shrinking the footprint of discrete MOSFET circuits up to 50 per cent.

The arrays can help designers reduce the number of batteries required for mobile devices. The flexibility of the devices is also suited for improving energy efficiency and battery life in medical devices, boosting audio quality in premium headphones and consumer devices, extending operating range for energy harvesting systems or enhancing sensitivity in sensor arrays among multiple other uses.

The arrays are designed to empower designers to build circuits with multiple cascading stages that operate at extremely low supply/bias voltage levels. It's now possible to build a Nano power input amplifier stage operating at a <0.2V supply voltage.

As an enhanced addition to the family of ALD110800A/ALD110800 EPAD Matched Pair MOSFETs, the new ALD210800A/ALD210800 arrays feature the industry's first Zero-Threshold voltage to enable circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges in ultra-low operating voltage environments. The MOSFETs are designed for exceptional device electrical characteristics matching with the Gate Threshold Voltage VGS(th)set precisely at +0.00V + /- 0.01V, IDS = +10µA @ VDS = 0.1V, featuring a typical offset voltage of only ± 0.001V (1mV).

Note the drain current IDS(ON) on the y-axis on the following four curves as it goes into the sub-nano-amp range and the gate-source overdrive voltage scale changes [The overdrive voltage is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VGS(th)) where VGS(th) is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Due to this definition, overdrive voltage is also known as "excess gate voltage" or "effective voltage." Overdrive voltage can be found using the simple equation: VOV = VGS—VGS(th)]:

These MOSFETs excel in limited operating voltage applications such as very low level voltage-clamps and normally-on nano-power circuits.

Additionally, the MOSFETs are intended as versatile design components for a broad range of analogue applications such as current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers.

 N-Channel

Figure 1: N-Channel current source application.

SourceApp

Figure 2: Cascode current source application.

Each individual MOSFET also exhibits tightly controlled manufacturing characteristics, delivering precise design limits from different production batches. They are built for minimum offset voltage and differential thermal response, and they can be used for switching and amplifying applications in +0.1V to +10V (± 0.05V to ±5V) powered systems requiring low input bias current, low input capacitance, and fast switching speed. At VGS > 0.00V, the device exhibits enhancement mode characteristics. At VGS <0.00V the device operates in depletion mode.

Further information is available at ALD's website.




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