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Fujitsu Semiconductor outs high-density FRAM products

27 Mar 2013

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Fujitsu MB85RS1MT and MB85RS2MT

The development of two ferroelectric RAM (FRAM) products has been announced by Fujitsu Semiconductor Asia Pte Ltd. (FSAL). MB85RS1MT and MB85RS2MT feature 1 Mbit and 2 Mbit of memory, respectively. Fujitsu Semiconductor said that the new products are the highest density serial-interface FRAM products that they have on their portfolio.

The two new FRAM products guarantee 10 trillion read/write cycles, roughly ten times more than existing chips, making them ideal for use in applications such as smart meters, industrial machinery and medical devices. Compared to identical density EEPROM, MB85RS1MT and MB85RS2MT consume 92 per cent less power during writing. In addition, because the new FRAM products can incorporate all the technology required for system memory components—which have typically consisted of EEPROM, SRAM and a battery for data retention—into a single chip, it is possible to substantially reduce component costs, mounted area, and power consumption. This, in turn, will also greatly contribute to the development of smaller, power-efficient equipment for which maintenance can be easily performed, since backup battery is not necessary.

As an update to its line-up of FRAM products, Fujitsu Semiconductor has recently developed MB85RS1MT (1 Mbit) and MB85RS2MT (2 Mbit), which represent the company's largest density FRAM products to date to feature an SPI serial interface. Both products feature an improved guaranteed read/write cycle count of 10 trillion cycles, which is ten times more than Fujitsu's existing FRAM products, providing even better support for real-time, continuous data recording.

For industrial machinery that employs SRAM for data recording and EEPROM for storing parameters and programs, the new FRAM products can incorporate these capabilities into a single chip, allowing for a reduction in the number of memory components required and obviating the need for batteries for data retention. The memory itself can also be shrunk into a smaller package size, making it possible to reduce the mounted area required for memory components by over 90 per cent. As a result, the new FRAM products help to reduce the size of end products, eliminate the need for battery replacement maintenance, and cut power consumption, in addition to contributing to lower component costs.

Sample Release Schedule
MB85RS1MT End of March 2013

MB85RS2MT End of March 2013

For more information, visit http://www.fujitsu.com.




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