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Toshiba reveals 600V super junction MOSFET

10 Apr 2013

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Toshiba Corp. has announced a line of high-speed diodes based on the 4th generation 600V system super junction MOSFET "DTMOS IV" series. Using the latest single epitaxial process, the devices have reduced the on-resistance per area by nearly 30 per cent compared to existing products, to achieve the leading level in the industry, indicated the company.

Toshiba added that high-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products, reducing loss and contributing to improved power efficiency. The devices are geared for switching power supplies, micro inverters, adaptors and photovoltaic inverters.

Follow this link for more on this product. http://www.semicon.toshiba.co.jp/eng/product/transistor/selection/topics/1267582_2470.html




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