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Toshiba buys Bridgelux GaN-on-Silicon tech, assets

26 Apr 2013

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Toshiba Corp. and LED company Bridgelux Inc. have entered into an agreement under which Toshiba will be acquiring Bridgelux's GaN-on-Silicon technology and related assets. Both parties have also agreed to expand their licensing and manufacturing relationship.

In January, 2012, Bridgelux and Toshiba entered into a Joint Development and Collaboration Agreement for the development of GaN-on-Silicon LED technologies. The success of that relationship was demonstrated by Toshiba's announcements of the achievement of world class performance for 8inch GaN-on-Silicon LED wafers and mass production of white LEDs. Both of these milestones were achieved using Bridgelux's crystal growth and LED device technologies as well as Toshiba's advanced silicon processes and manufacturing technologies.

The enhanced strategic relationship announced this week provides for a new business opportunity through the expanded collaboration for next generation LED chips and packages or platform based on the jointly developed GaN-on-Silicon technology, as well as a manufacturing arrangement securing Bridgelux a source of supply for GaN-on-Silicon-based LED chips.

The GaN-on-Silicon assets included in the sale, and the related Bridgelux employees, will remain onsite at Bridgelux's headquarters in Livermore after the transaction closes to assure continued technical and business collaboration between the companies.




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