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Infineon rolls 650V superjunction MOSFET tech

10 May 2013

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Infineon Technologies has expanded its high voltage portfolio with CoolMOST C7, a 650V superjunction MOSFET technology. According to the company, the C7 product family offers excellent RDS(on) for all standard packages and, as a result of its low switching losses, efficiency improvements over the full load range.

C7 is optimised for hard switching topologies such as continuous conduction mode power factor correction (CCM PFC), two transistor forward (TTF) and solar boost. Typical applications include solar, server, telecom and uninterruptible power supply (UPS). The 650V breakdown voltage also makes C7 suitable for applications that require extra safety margin.

The C7 series claims to offer the world's lowest RDS(on) of 19mΩ in a TO-247 package and 45mΩ in the TO-220 and D2PAK packages. The fast switching performance of C7 enables customers for the first time to operate at switching frequencies greater than 100kHz while achieving Titanium levels of efficiency in server PFC stages, noted Infineon. This enables higher power density by reducing the space requirements for the passive components.

Furthermore, reduced energy in the output capacitance (Eoss) as well as the low gate charge (Qg) bring efficiency benefits also at light load conditions.

Samples of the 650V CoolMOS C7 products are available. Volume production will start in June 2013.




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