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Resistive RAM stores 1TB of data in a 200mm2 chip

07 Aug 2013

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Crossbar, a start-up company focused on high capacity and high-performance non-volatile memory technology, has introduced the Resistive Random Access Memory (ReRAM) technology designed for single-chip as well as 3D stacking storage. Compatible with complementary metal oxide silicon memory, the product can store up to 1TB of data on a single 200mm2 chip and multiple terabytes with 3D stacking. Users can load as much as 250 hours of HD movies and play them back from an IC roughly the size of a postage stamp. The Crossbar ReRAM also writes 20 times faster and was found to be 10 times more reliable than NAND flash memory, with significantly lower power consumption.

The Crossbar memory cell is based on three simple layers: A non-metallic bottom electrode, an amorphous silicon switching medium and a metallic top electrode. The resistance switching mechanism is based on the formation of a filament in the switching material when a voltage is applied between the two electrodes. This simple and very scalable memory cell structure enables an entirely new class of ReRAM, which can be easily incorporated into the back end of line of any standard CMOS manufacturing fab.


Crossbar ReRAM

The simplicity, stackability and CMOS compatibility of Crossbar's ReRAM technology enables logic and memory to be easily integrated into a single chip at the latest technology node.


Non-volatile memory is the most common storage technology used for both code storage (NOR) and data storage (NAND) in a wide range of electronics applications. According to market research firm WebFeet Research, non-volatile memory is expected to grow to become a $48.4 billion market in 2016. Crossbar plans to bring to market stand-alone chip solutions, optimised for both code and data storage, used in place of traditional NOR and NAND Flash memory. Crossbar also plans to licence its technology to system on a chip (SOC) developers for integration into next-generation SOCs.




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