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Samsung touts 3D V-NAND-based SSD for enterprise apps

15 Aug 2013

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Samsung 3D V-NAND-based SSD

Samsung Electronics Co. Ltd has unleashed what it flaunts as the first solid state drive (SSD) based on its 3D V-NAND technology. According to the firm, the SSD is intended for enterprise servers and data centres.

Samsung's V-NAND SSD comes in 960GB and 480GB versions. The 960GB version boasts the highest level of performance, offering more than 20 per cent increase in sequential and random write speeds by utilising 64 dies of MLC 3D V-NAND flash, each offering 128Gb of storage, with a 6Gb/s SATA interface controller. The new V-NAND SSD also offers 35K program erase cycles and is available in a 64mm form factor with x, y and z-heights of 10cm, 7cm and 7mm, which provides server manufacturers with more design flexibility and scalability.

Samsung's proprietary 3D V-NAND technology achieves manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by using cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array. During his keynote remarks, EVP E.S.

Samsung will continue to introduce next-generation V-NAND products with enhanced performance to meet diverse customer needs for NAND flash-based storage. These customer focuses will range from large data centres that can realise higher investment potential based on greater performance and energy efficiency to PC applications that place a high priority on cost-effectiveness and high density, further strengthening Samsung's business competitiveness.

Samsung said it began producing its V-NAND SSDs earlier this month.




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