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GaN devices to drive microwave RF power IC market

23 Sep 2013

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A report from ABI Research has projected that the introduction of high-power gallium nitride devices for four to 18GHz will boost the microwave RF power semiconductor market, driving it to grow to more than $250 million by 2018. The devices will benefit various fields, including point-to-point communications, SATCOM and radar use, and will also have potential industrial and medical applications.

Microwave RF power semiconductors examine microwave RF power semiconductor devices that have power outputs of greater than 3 watts and operate at frequencies of 4 to 18GHz.

"While gallium arsenide devices are presently the backbone of microwave RF power, it is gallium nitride that will drive growth going forward," notes research director Lance Wilson. "GaN can operate at much higher voltages and at power levels that were difficult or impossible to reach using GaAs."

Microwave GaN is reaching the performance points that can start to challenge travelling wave tube applications for new designs that have formerly used the latter.

This new study is part of ABI Research's ongoing effort to track the major changes in the RF power industry. With the current release, analysis of the six main vertical segments (C-Band GaAs, C-Band GaN, X-Band GaAs, X-Band GaN, Ku-Band GaAs, and Ku-Band GaN) is further expanded to 28 application sub-segments.




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