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EPC's transistors ready for switching apps past 10MHz

03 Oct 2013  | Steve Taranovich

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Efficient Power Conversion (EPC) recently expanded its line of high-speed, high performance transistors with the EPC8000 family. The company's latest devices have switching transition speeds in the nanosecond range, making them capable of hard switching applications above 10MHz. Even beyond the 10MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range.

Figure 1: Almost an order of magnitude reduction in output charge over previous devices is achieved to enhance the speed of the new devices.

Products in the family are available with on-resistance values from 125mΩ through 530mΩ, and three blocking voltage capabilities, 40V, 65V and 100V. These new transistors have several new features that include reduction in QGD thereby reducing voltage transient switching losses, improved Miller ratio providing high dv/dt immunity, low inductance pads for improved connection to both gate and drain circuits, orthogonal current flow between the gate and drain circuits for enhanced CSI reduction, and a separate gate return connection also for enhanced CSI reduction.

Figure 2: A low gate charge (nC) is achieved vs. VGS for the EPC8004 beyond other eGan devices.

Switching speeds are sub-nanosecond

Figure 3: The EPC, when driven by the TI LM5113, achieves sub-nanosecond switching speeds.

Figure 4: Gain vs. frequency is impressive for such a power device.

IC packaging design helps achieve the speed

High frequency packaging achieves the high speed needed for special applications:

  • Separate gate return (source)
  • Low gate inductance
  • Orthogonal gate and drain circuit layout
  • Low internal parasitic inductances
  • Figure 6: The layout of gate and power loop is an extra enhancement of speed.

    Figure 7: High efficiency is achieved by operating in voltage mode Class D operation.

    Applications

    Figure 8: Wireless power is a huge application for these high speed power devices.

    Examples of applications include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers, highly resonant wireless power transfer systems for wireless charging of mobile devices.

    Figure 9: Envelope tracking is a growing market in communications systems power transmitter design to help improve poor efficiency in the Power Amplifier (PA).

    The EPC9027 development board, featuring the EPC8007 devices and the LM5113 gate driver IC in a half bridge configuration is available as well.

    Figure 10: The EPC9027 development board has a half-bridge configuration using EPC8007 eGaN devices and TI LM5113 gate drivers.

    EPC8000 Family Product Specifications:

    Evaluation units of the EPC8000 family of products are in 10-piece packs starting at $430.00




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