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MagnaChip debuts silicon-on-insulator BCD IC process

23 Oct 2013  | Peter Clarke

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MagnaChip Semiconductor announced that it has developed a 0.35µm silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) high voltage IC manufacturing process.

"We intend to expand our SOI based BCD portfolio with additional voltage ratings to continue to support the growing applications that can benefit from the isolation feature of this process," said Namkyu Park, senior vice president of marketing for MagnaChip's manufacturing services division.

The process supports 8V to 16V isolated high voltage devices that are implemented on SOI substrates for applications that include audio amps, DC-DC converters, and power management ICs for the mobile and consumer markets. At the same time the process supports 3.3V and 5.0V CMOS digital logic and mixed-signal and analogue devices.

Integrating CMOS and high voltage devices on SOI substrates with deep trench isolation (DTI) offers minimum device area, minimum substrate leakage, improved radiation hardness and good high-temperature operation, stated MagnaChip. This enables the design of PMICs with unipolar or bipolar supplies with latch-up free operation.




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