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Siliconix MOSFET uses TrenchFET Gen IV technology

20 Jan 2014

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The Siliconix SiZ340DT power MOSFET has been unveiled by Vishay Intertechnology for the design of synchronous buck converters. The 30V fourth-generation MOSFET features asymmetrical dual TrenchFET technology and has 57 per cent lower resistance as well as 25 per cent higher power density. Packaged in the PowerPAIR 3mmx 3mm packaging, the SiZ340DT can be ordered in samples and production quantities with 14- to 16-week lead times for large orders.

The TrenchFET Gen IV technology of the SiZ340DT is designed to reduce on-resistance without significantly increasing the gate charge, minimising conduction losses and reducing total power loss for higher power output. As a result, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1milliohms at a 10V gate drive and 7.0 milliohms at 4.5V. The high-side Channel 1 MOSFET features on-resistance of 9.5milliohms at 10V and 13.7milliohms at 4.5V .

Vishay's Siliconix SiZ340DT is ideal for synchronous buck designs in "cloud computing" infrastructures, servers, telecommunication equipment, and various client-side electronic devices and mobile computing applications. The intended DC/DC blocks include system auxiliary power rails in servers, computers, notebook computers, graphic cards, gaming consoles, storage arrays, telecom equipment, DC/DC bricks, and POL converters. The SiZ340DT can also be used in DC/DC conversion circuitry that supplies power to FPGAs. In these applications, the device maintains a low gate charge of 5.6 nC for the Channel 1 MOSFET and 10.1 nC for Channel 2. The resulting low on-resistance times gate charge reduces conduction and switching losses to improve total system efficiency.

Because of its improved efficiency, the SiZ340DT can run 30 per cent cooler than previous-generation devices at the same output load, or provide increased power density. For typical DC/DC topologies with 10A to 15A output current and an output voltage below 2V, the compact 3 mm by 3 mm footprint area of the SiZ340DT saves up to 77 per cent PCB space compared with using discrete solutions, such as a PowerPAK 1212-8 MOSFET for the high-side and a PowerPAK SO-8 for the low side. Reducing switching losses, the device allows higher switching frequencies beyond 450kHz to shrink the PCB size, without sacrificing efficiency, by enabling the use of smaller inductors and capacitors. In addition, by providing higher performance than multiple paralleled previous-generation devices, the MOSFET can potentially reduce the overall component count and simplify designs.

In accordance with JEDEC standards, the RoHS-compliant SiZ340DT is completely Rg- and UIS-tested, halogen-free.




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