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Power MOSFET offers low Rds(on), small footprint area

30 Apr 2014

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Vishay Intertechnology introduced its -30V, 12V VGS p-channel TrenchFET power MOSFET in the PowerPAK SC-70 package. With the industry's lowest on-resistance at -4.5V and -2.5V gate drives for a -30 V device in the 2mm by 2mm footprint area, the SiA453EDJ is designed to save space and increase power efficiency in portable electronics.

The -30V VDS of the Vishay Siliconix device provides the headroom needed for over-voltage spikes, while its 12V VGS enables lower on-resistance ratings of -3.7V and -2.5V for portable, battery-operated applications. The MOSFET is optimised for load and input over-voltage protection switches, battery chargers, and DC/DC converters in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, hard disc drives, and handheld consumer electronics including electric toothbrushes, shavers, scanners, and RFID readers.

For these applications, the SiA453EDJ offers extremely low on-resistance of 18.5milliohms (-10V), 23.5milliohms (-4.5V), 26milliohms (-3.7V), and 37.7milliohms (-2.5V), and provides built-in ESD protection of 4,000V.

The SiA453EDJ's on-resistance at -4.5V is 36 per cent lower than the closest competing -30V device, and 50 per cent lower than the closest competing device with a 12V VGS. The MOSFET's on-resistance at -2.5V is 46 per cent lower than the next-best 12V VGS device. These industry-low values allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while the device's compact PowerPAK SC-70 package saves critical PCB space.

The MOSFET is Rg and UIS tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.




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