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RF antenna switch ICs tout low insertion loss, RF distortion

11 Sep 2014

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 SP12T

Toshiba Corporation has developed SP12T RF antenna switch ICs for smartphones supporting LTE-Advanced that achieve the lowest-level insertion loss and RF distortion in the industry.

With the spread of mobile communications, the number of RF bands and data speed rates is increasing dramatically. Requirements for antenna switch ICs, which are used in the RF circuits of mobile devices, are leaning towards multi-port and improvements to RF performance, including insertion loss and linearity. In addition, in order to meet the drastic growth of high data rate mobile communication devices in emerging markets, it is necessary to achieve these RF performance improvements in a cost-effective method.

In responding to these requirements, Toshiba has developed TaRF6, a new generation TarfSOI (Toshiba advanced RF SOI) process using silicon-on-insulator (SOI) technology. TarfSOI achieves integration of analogue, digital, and RF circuits on a single chip. Compared to other conventional solutions, such as GaAs, it delivers a cost-effective solution that supports highly complex switching functions and RF performance.

With the new TaRF6 process, MOSFETs customised for RF switch applications have been developed and used in the new SP12T RF antenna switch IC, leading to a performance of 0.42dB in insertion loss (f=2.7GHz) and -90dBm in second harmonic distortion. Compared to products using the previous TaRF5 process, there is a 0.26dB improvement in insertion loss (f=2.7GHz) and 18dB improvement in second harmonic distortion. The lower insertion loss can contribute to low power consumption of smartphones, while the lower distortion can contribute to the development of carrier aggregation smartphones that require low distortion.

Insertion loss characteristics

Insertion loss characteristics

Toshiba will expand the product line-up using the TaRF6 process with low insertion loss and low distortion by the end of the year, to meet the requirements for multi-port and complex functions demanded in LTE now being implemented worldwide, and LTE-Advanced expected to follow. Furthermore, Toshiba is considering offering SOI foundry services using TarfSOI technology.




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