600V fast body diode N-channel MOSFETs tout low on-resistance23 Dec 2014
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Vishay Intertechnology Inc. has released the first two devices in its 600V EF series of fast body diode N-channel power MOSFETs. The Vishay Siliconix SiHx28N60EF and SiHx33N60EF feature low reverse recovery charge and on-resistance to increase reliability and energy efficiency in industrial, telecom, computing and renewable energy applications, stated the company.
Built on second-generation Super Junction Technology, the MOSFETs provide a complement to Vishay's existing standard E series components, expanding the company's offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.
The SiHx28N60EF and SiHx33N60EF increase reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs, stated Vishay. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress. In addition, the reduced Qrr results in lower reverse recovery losses compared with standard MOSFETs.
Offered in four packages, the 28A SiHx28N60EF and 33A SiHx33N60EF feature ultra-low on-resistance of 123Ω and 98Ω, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications including solar inverters, server and telecom power systems, ATX/silver box PC SMPS, welding equipment, UPS, battery chargers, semiconductor capital equipment, and LED and HID lighting.
The devices are geared to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 per cent UIS testing. The MOSFETs are RoHS-compliant and halogen-free.
Samples of the EF Series MOSFETs are available. Production quantities will be available in 1Q15, with lead times of 16 weeks for large orders.
Link to product datasheets:
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