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IR rolls 25V dual N-channel power MOSFET in PQFN package

30 Dec 2014  | Susan Nordyk

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International Rectifier has announced a 25V dual N-channel power MOSFET housed in a 4 x 5mm PQFN power-block package. The IRFH4257D is intended for 12V input DC/DC synchronous buck applications such as telecom equipment, servers, graphic cards and computers.

With this latest power-block addition, designers now have the option of choosing a 4 x 5mm or 5 x 6mm PQFN to suit their design requirements.

IRFH4257D

The IRFH4257D offers low on-state resistance of less than 1.8mΩ and low gate charge of 9.7nC typical. Other specifications include a drain-to-source breakdown voltage of 25V minimum and a current rating of 25A. The device is qualified to industrial grade and moisture sensitivity level 1 and features an environmentally friendly, lead-free and RoHS-compliant BOM.

Prices for the IRFH4257D FastIRFET start at $0.99 in lots of 10,000 units. Production orders are available immediately.




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