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MOSFETs' off-board height reduced by 50%

08 May 2012

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Diodes Incorporated has launched a line of what the company describes as high-efficiency N- and P-channel MOSFETs in low-profile DFN2020-6 packages.

With an off-board height of only 0.4mm and a footprint of 4mm2, the DFN2020H4-packaged DMP2039UFDE4, a -25V rated P-channel device, is 50 percent thinner than competing devices, claims Diodes. The other MOSFETs in the company's new series are provided in the 0.5mm-high DFN2020E package, which is 20 percent thinner than the common 0.6mm high alternatives.

According to the company, the DMP2039UFDE4, which is targeted at load-switching applications, also provides circuit designers with 3kV protection against human-borne electrostatic discharge.

The new MOSFETs' low typical RDS(on), for example just 13mΩ at a VGS of 4.5V for the -12V P-channel DMP1022UFDE, means conduction losses can also be minimized in battery-charging applications.

The 20V N-channel DMN2013UFDE, meanwhile, makes an ideal load switch or high-speed switch in DC/DC buck and boost converters and again offers a high 2kV ESD protection rating. Meanwhile, operating at a VDS of 60V, the DMN6040UFDE is claimed by Diodes to be one of the first high-voltage MOSFETs to be introduced in the DFN2020 package, a package which suits small form-factor industrial and HVAC controls.

Particularly well-suited to ultra-slim portable product designs, such as smart phones, tablets and digital cameras, the initial series of nine MOSFETs in the new line is comprised of -12V, -20V, -25V and -40V P-channel and 12V, 20V and 60V N-channel parts.

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