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JFET ups efficiency levels for solar inverters

14 May 2012

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Infineon Technologies has introduced its new CoolSiC 1200V SiC JFET family. According to the company, the release strengthens Infineon�s market leadership in the SiC (Silicon Carbide) product segment. The company claims that the new CoolSiC 1200V SiC JFETs have dramatically lower switching losses compared to IGBTs, which allow higher switching frequencies to be used without sacrificing overall system efficiency. The company says this enables the use of much smaller passive components, which result in smalleroverall solution size, lower weight and reduced system cost. Alternatively, a higher output power solution can be realized within the same inverter housing.

In order to ensure that the normally-on JFET technology is safe and easy to use, Infineon says it has developed a concept which it called Direct Drive Technology. In this concept, the JFET is combined with an external Low Voltage MOSFET and dedicated driver IC which ensures safe system start-up conditions as well as fast and controlled switching.The CoolSiC JFET features a monolithically integrated body diode that Infineon says has a switching performance comparable to an external SiC Schottky barrier diode.

Samples of the CoolSiC JFET products as well as the Driver ICs are available in Q2 2012. First OEM ramp-ups are expected only in the first half of 2013, however. Pricing for the IJW120R100T1 (100mOhm) starts at $24.90 per piece for 1,000-unitquantity orders.

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