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NXP, A*STAR IME team up on 200mm GaN-on-Si power devices

28 May 2012

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A*STAR Institute of Microelectronics (IME) and NXP Semiconductors have joined forces to develop a 200mm gallium nitride-on-silicon (GaN-on-Si) process and technology for high voltage power devices. The research agreement is targeted at delivering highly efficient energy solutions in end applications including computing and communications, aerospace and automotive applications.

The IME and NXP team aims to bring about considerable reduction in manufacturing cost compared to using smaller size wafers.�The work will be carried out in IME's modern 200mm engineering fab that offers the best-in-class GaN metal organic chemical vapor deposition (MOCVD) capabilities for the production of GaN wafers, the organizations indicated.

Gallium nitride is one of the most important semiconductor materials since silicon and has been used as the key material for next generation high frequency, high power transistors capable of operating at high temperatures.�GaN-on-Si offers the key advantages of combining high operation voltage, high switching speed, low loss, and high integration level, on large diameter Si wafers. The CMOS-compatible device process that leverages the economics of scale and compatibility with high throughput and high capacity 200mm Si-based wafer process technology offers significant opportunity for cost-efficient volume production.

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