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VCM bit cell by Kilopass quadruples memory capacity

20 Sep 2012  | Nicolas Mokhoff

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Kilopass Technology introduced its embedded VCM NVM IP bit cell technology at MemCon today, detailing its ability to quadruple the density of available anti-fuse NVM IP bit cells.

Currently, embedded non-volatile memory (eNVM) has only been limited to restricted erase cycles and an upper limit capacity of 2Mb. It is now possible to enable eNVM technology to be available at capacities of 4Mb to 32Mb with the Vertical Cross-point Memory (VCM) bit cell.

"The VCM bit cell is an entirely new memory bit cell giving us an unprecedented memory density in standard logic processes from 180nm to the leading edge 20nm and beyond," said Harry Luan, Chief Technology Officer at Kilopass Technology Inc.

The VCM bit cell technology uses one single p-mos transistor to both store and control the memory content, which reduces the footprint to 12 F2 for VCM memory, where each F describes a manufacturable feature. A typical embedded flash memory has an area of about 50 F2.

The VCM bit cell memory technology fills an eNVM void not addressed by external components such as serial-flash/EEPROM, ROM, and embedded flash.

Kilopass will initially target wireless devices built in 55nm to 40nm technologies.

Kilopass said it has completed the process technology development and is undergoing foundry enablement. Once completed, it will be incorporated into Kilopass's so-called Numera few-time programmable offering.

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