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Development boards from EPC feature eGAN FETs

12 Oct 2012

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Efficient Power Conversion Corp. (EPC) has unveiled two development boards that feature the company's enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). According to the company, the boards demonstrate how the recent introductions of IC gate drivers, optimised for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.

The EPC9003 development board is a half bridge configuration containing two 200V EPC2010 eGaN FETs with a 5A maximum output current using the low-side gate driver optimised for GaN devices—the LM5114 from Texas Instruments. The EPC2010 is geared for applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE) and synchronous rectification.

Additionally, EPC released the EPC9006 development board containing two 100V EPC2007 eGaN FETs with 5A maximum output current. This board uses the LM5113 from TI, a 100V half bridge driver optimised for GaN transistors. The LM5113 used on this board is packaged in a 2 x 2 BGA package allowing for a very compact power stage with the driver and two eGaN FETs, detailed EPC. Applications benefiting from the performance of the EPC2007 eGaN FET include high-speed DC-DC power supplies, point-of-load converters, hard-switched and high frequency circuits, added the company.

Both the EPC9003 and the EPC9006 are intended to simplify the evaluation process of eGaN FETs by including all the critical components on single 2 x 1.5in boards that can be easily connected into any existing converter. In addition, there are various probe points on the boards to facilitate simple waveform measurement and efficiency calculation. Quick Start Guides are included with both development boards for reference and ease of use.

EPC9003 and EPC9006 development boards are priced at $95 each.

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