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Cypress expands memory line with Ramtron's FRAM

27 Dec 2012

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Cypress Semiconductor Corp. has integrated Ramtron International's ferroelectric random access memory (FRAM) products into its line of fast-write nonvolatile memories. The FRAM devices complement Cypress' nonvolatile static random access memories (nvSRAMs) that according to the company are the world's fastest. The combination serves a range of applications that require data to be retained when power is lost, stated the companies.

The merger between Cypress and Ramtron was officially completed on November 20, 2012. Cypress is maintaining Ramtron part numbers to help support existing FRAM customers. There will be no supply disruption for more than 95 per cent of production parts, including all popular serial FRAM memories and processor companions. Along with popular serial and parallel interface memories, the Cypress nonvolatile memory portfolio also includes wireless memories commonly used in RFID tags and integrated products that combine nonvolatile memory with a real-time clock in one package.

FRAM and nvSRAM are inherently nonvolatile and do not require a battery backup. FRAM cells inherently feature 10 trillion cycle endurance, fast single-cycle and symmetrical read/write speeds, low energy consumption, gamma radiation tolerance and immunity to electromagnetic interference. These features make it ideal for a wide range of applications, including automotive, smart meters, medical devices, ePOS and printers.

Cypress's nvSRAMs are manufactured on its S8 0.13µ Silicon Oxide Nitride Oxide Silicon (SONOS) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance. nvSRAMs feature infinite read, write and recall cycles, with 20-year data retention. This makes them ideal for applications requiring continuous high-speed writing of data and absolute nonvolatile data security, including RAID, SSD, industrial automation, computing and gaming applications the companies noted.

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