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Toshiba reveals 600V super junction MOSFET

10 Apr 2013

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Toshiba Corp. has announced a line of high-speed diodes based on the 4th generation 600V system super junction MOSFET "DTMOS IV" series. Using the latest single epitaxial process, the devices have reduced the on-resistance per area by nearly 30 per cent compared to existing products, to achieve the leading level in the industry, indicated the company.

Toshiba added that high-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products, reducing loss and contributing to improved power efficiency. The devices are geared for switching power supplies, micro inverters, adaptors and photovoltaic inverters.

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