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SiC transistor boasts 500W output power with 19dB gain

08 May 2013  | Carolyn Mathas

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M/A-COM Technology Solutions recently unveiled a gold-metalized pre-matched GaN on silicon carbide (SiC) transistor. The MAGX-001214-500L00 is optimised for pulsed L-Band radar apps. It provides 500W of output power with 19dB of gain and 55 per cent efficiency. It also boasts very high breakdown voltages allow for operation at 50V under extreme load mismatch conditions.

Operating between the 1200MHz – 1400MHz Frequency range, it is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3x106hours, and is available as both flanged and flangeless packaged devices.

flangeless packaged devices

Figure 1: Typical performance of the MAGX-001214-500L00.

Samples of are available from stock.

For more information visit M/A-COM Technology Solutions, Inc.

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