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Toshiba's Low RDS(ON) MOSFET ready for smartphone charging

28 May 2013

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Toshiba America Electronic Components has recently unveiled three new high current P-ch MOSFETs. The SSM6J505NU, SSM6J501NU and SSM6J503NU all support high currents for high power dissipation packages, the new MOSFETs can be used as charging switches for smartphones and other mobile devices with high current charging circuits.

Toshiba used the latest UMOS VI process to design the SSM6J505NU, SSM6J501NU and SSM6J503NU in a small 2.0×2.0×0.75mm (UDFN6B) package that achieves low ON-resistance and allows large currents.

"As additional functions are added to mobile devices and more demands are made on their batteries, boosting charge density and improving the user experience by reducing charging time become top priorities," noted Talayeh Saderi , senior business development engineer for TAEC. "Engineers designing smartphones, laptops, DSCs, and other portable devices will find thatour new MOSFETs help them achieve these outcomes – and offer the best performance in their class."

Toshiba's new low RDS(ON) MOSFETs are available now. Budgetary pricing begins at $0.13 for sampling quantities.

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