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RF power transistor aimed at 2.45GHz ISM band

07 Jun 2013

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NXP RF power transistor

NXP Semiconductors N.V. has announced what it describes as the industry's first complete RF power transistor portfolio intended specifically for the 2.45GHz ISM frequency band. According to the company, the devices enable RF energy to be used as a clean, highly efficient and controllable heat source.

Optimally matched to the 2.45GHz ISM band, the NXP BLF2425M and BLF25M series of RF power transistors claim to achieve best-in-class efficiencies in excess of 52% and offer a full range of power levels between 12W and 350W. NXP developed this dedicated ISM portfolio while working with lead customers on RF-powered solutions for home appliances for cooking, heating and drying; medical devices for precision medical procedures; and automotive engines. The devices are based on NXP's latest 28V LDMOS processes and all feature NXP's field-proven ruggedness, manufacturing consistency and long-term reliability, which enable these transistors to drive the typically mismatched loads of ISM applications, indicated the firm.

The BLF2425M6L(S)180P, BLF2425M7L(S)140 and BLF2425M7L(S)250P are in volume production. Engineering samples of the BLF25M612(G) are available.

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