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Vishay Intertech MOSFET voted best power product in China

18 Dec 2013

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Vishay Intertechnology's Si7655DN Gen III power MOSFET was recently awarded top product under the Power Devices and Modules category of the EDN China Innovation Award.

The Si7655DN is a -20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package that offers on-resistance of just 4.8 milliohms maximum at a 4.5 V gate drive. It is the first device to be released in a new version of the Vishay Siliconix PowerPAK 1212 package, which enables lower-RDS(on) devices while providing a 28 per cent slimmer nominal profile of 0.75 mm and maintaining the same PCB land pattern.

Utilising the new PowerPAK 1212 package version and Vishay Siliconix's industry-leading p-channel TrenchFET Gen III technology, the Si7655DN provides industry-low maximum on-resistance of 3.6 milliohms (-10 V), 4.8 milliohms (-4.5 V), and 8.5 milliohms (-2.5 V). These specifications represent an improvement of 17 per cent or better over the next best competing -20 V devices. The low on-resistance of the Si7655DN allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while its compact package helps to save valuable space.

The EDN China Innovation Awards were introduced in 2005 to recognise achievements in the design of ICs and related products in the Chinese market. This year, 144 products from 82 companies entered the competition in nine technology categories. EDN China's online readers voted to shortlist 73 products for nomination, with a group of technical experts and senior EDN editors selecting the final winners.

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