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Toshiba MOSFET supports fast current switching

17 Jan 2014

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Users of smartphones, laptops and tablet PCs may reduce the number of times they recharge their gadgets thanks to the new SSM6N58NU MOSFET developed by Toshiba Electronics Europe. The low-resistance dual N-channel MOSFET supports high charging currents and, because of its 0.75mm height, requires only 2mm x 2mm of board space. With a 2W power dissipation, the product can endure up to 150 degrees C of channel temperatures.

The SSM6N58NU has a maximum DC drain current (ID) of 4A and maximum pulsed drain current (IDP) of 10A. Because the gate charge and capacitance of the MOSFET is significantly reduced, fast switching is supported. The N-channel MOSFET ensures efficiency and switching speeds through a design that minimises ON resistance (RDS(ON)) and input capacitance (CISS).

Input capacitance is as low as 129pF, while RDS(ON) measures 67mΩ at VGS=4.5V. This enables low loss and high speed operation with a turn-on time (ton) of 26ns, and a turn-off time (toff) of 9ns. The low gate charge of Qg=1.8nC (@ ID=4A) significantly reduces the AC dissipation at 3MHz enabling usage in DC converter applications. Independent MOSFET configuration and high ESD protection levels of 2kV also enable usage in battery protection circuits.

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