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Toshiba unveils SiC Schottky barrier diodes

02 Jun 2014

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 TO-220F-2L package products

Toshiba Corporation's Semiconductor and Storage Products Company has added the insulated TO-220F-2L package products to its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD). The four products expand the 6A, 8A, 10A, and 12A line-up from the current TO-220-2L package products.

SBDs are suited for applications including server power supplies and power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50 per cent more efficient (according to a Toshiba survey).

SiC power devices offer more stable operation than current silicon devices—even at high voltages and currents—as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters.

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