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Richardson bares SiC, half-bridge module from Cree

15 Jul 2014

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Richardson RFPD Inc. announced the availability and full design support capabilities for a new 1.2kV, 5mΩ all-silicon carbide (SiC), half-bridge module from Cree Inc.

The CAS300M12BM2 is available in a 62mm x 106mm x 30mm package and includes a Z-FET MOSFET and a Z-Rec diode in a half-bridge configuration.

The CAS300M12BM2 incorporates a low-loss 300A SiC MOSFET switch that, in some applications, is capable of replacing Si IGBTs rated at 600A or more, thereby permitting a dramatic reduction in the number of modules required overall.


Higher switching frequency supports reduced magnetics size, while higher operating junction temperature contributes to decreased cooling requirements—resulting in an overall smaller, lighter system. Furthermore, the use of a module lends itself to reduced complexity and easier integration, resulting in improved reliability.

The module is ideally suited for induction heating, motor drive, solar and wind inverter, UPS and SMPS, and traction applications.

According to Cree, additional key features of the device include ultra-low loss, high-frequency operation, zero reverse recovery current from diode, zero turn-off tail current from MOSFET, normally-off failsafe device operation, ease of paralleling, and copper base plate and aluminium nitride insulator.

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