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Low profile photocouplers take on IGBTs, power MOSFETs

08 Sep 2014

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 Toshiba photocouplers

Toshiba America Electronic Components, Inc. (TAEC) unveiled the TLP5751, TLP5752, and TLP5754—a series of low-profile, rail-to-rail output gate-drive photocouplers for directly driving low- to medium-power IGBTs and power MOSFETs.

The TLP5751 offers a peak output current of 1A and can drive power MOSFETs and low-power IGBTs up to 20A. The 2.5A TLP5752 and 4A TLP5754 will drive power MOSFETs and IGBTs with current ratings to 80A and 100A, respectively. Operating temperature is from -40°C to 110°C, and target applications include home appliances, factory automation equipment and inverter designs that require high levels of isolation and stable operation across an extended temperature range.

All of the new photocouplers are housed in a low-profile SO6L package, which is 54 per cent smaller in terms of height than photocouplers that use a DIP8 package and uses just 43 per cent of the board mounting area. Despite their low height, the photocouplers have a guaranteed creepage distance of 8mm and an isolation voltage of 5kV.

The TLP57xx devices offer rail-to-rail output, delivering stable operation and enhanced switching performance. Power supply voltage is from 15V to 30V and maximum supply current is 3mA.

The TLP5751, TLP5752, and TLP5754 are comprised of a GaAlAs infrared LED and integrated high-gain, high-speed photodetector, and feature an under-voltage lockout (UVLO) function. An internal Faraday shield ensures a guaranteed common-mode transient immunity of 35kV/μs. Maximum propagation delay time is rated at 150ns and maximum propagation delay skew at 80ns.




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