Path: EDN Asia >> Product Centre >> Consumer Electronics >> RF antenna switch ICs tout low insertion loss, RF distortion
Consumer Electronics Share print

RF antenna switch ICs tout low insertion loss, RF distortion

11 Sep 2014

Share this page with your friends


Toshiba Corporation has developed SP12T RF antenna switch ICs for smartphones supporting LTE-Advanced that achieve the lowest-level insertion loss and RF distortion in the industry.

With the spread of mobile communications, the number of RF bands and data speed rates is increasing dramatically. Requirements for antenna switch ICs, which are used in the RF circuits of mobile devices, are leaning towards multi-port and improvements to RF performance, including insertion loss and linearity. In addition, in order to meet the drastic growth of high data rate mobile communication devices in emerging markets, it is necessary to achieve these RF performance improvements in a cost-effective method.

In responding to these requirements, Toshiba has developed TaRF6, a new generation TarfSOI (Toshiba advanced RF SOI) process using silicon-on-insulator (SOI) technology. TarfSOI achieves integration of analogue, digital, and RF circuits on a single chip. Compared to other conventional solutions, such as GaAs, it delivers a cost-effective solution that supports highly complex switching functions and RF performance.

With the new TaRF6 process, MOSFETs customised for RF switch applications have been developed and used in the new SP12T RF antenna switch IC, leading to a performance of 0.42dB in insertion loss (f=2.7GHz) and -90dBm in second harmonic distortion. Compared to products using the previous TaRF5 process, there is a 0.26dB improvement in insertion loss (f=2.7GHz) and 18dB improvement in second harmonic distortion. The lower insertion loss can contribute to low power consumption of smartphones, while the lower distortion can contribute to the development of carrier aggregation smartphones that require low distortion.

Insertion loss characteristics

Insertion loss characteristics

Toshiba will expand the product line-up using the TaRF6 process with low insertion loss and low distortion by the end of the year, to meet the requirements for multi-port and complex functions demanded in LTE now being implemented worldwide, and LTE-Advanced expected to follow. Furthermore, Toshiba is considering offering SOI foundry services using TarfSOI technology.

Want to more of this to be delivered to you for FREE?

Subscribe to EDN Asia alerts and receive the latest design ideas and product news in your inbox.

Got to make sure you're not a robot. Please enter the code displayed on the right.

Time to activate your subscription - it's easy!

We have sent an activate request to your registerd e-email. Simply click on the link to activate your subscription.

We're doing this to protect your privacy and ensure you successfully receive your e-mail alerts.

Add New Comment
Visitor (To avoid code verification, simply login or register with us. It is fast and free!)
*Verify code:
Tech Impact

Regional Roundup
Control this smart glass with the blink of an eye
K-Glass 2 detects users' eye movements to point the cursor to recognise computer icons or objects in the Internet, and uses winks for commands. The researchers call this interface the "i-Mouse."

GlobalFoundries extends grants to Singapore students
ARM, Tencent Games team up to improve mobile gaming

News | Products | Design Features | Regional Roundup | Tech Impact