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GaN-on-Si white LEDs streamline lighting design

12 Sep 2014

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A new series of white LEDs is simplifying the designs for general and industrial lighting. Toshiba Electronics Europe recently launched its latest line of ultra-compact devices that combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package.

Toshiba LETERAS TL1L3 series

White LEDs are typically fabricated on costly sapphire substrates using 100mm or 150mm wafers, but the LETERAS LEDs made use of a cheaper GaN-on-Si process technology that allows GaN LEDs to be produced on 200mm silicon wafers.

Devices in the LETERAS TL1L3 series of 1.0W LEDs are supplied in a package with a footprint of

3.5mm x 3.5mm and a height, including lens, of just 2.42mm. Despite their small size, the

LEDs deliver luminous flux ratings of between 112 and 145 lumens, depending on the correlated colour temperature (CCT).

The new LEDs with integrated lens can be used in tube lights, light bulbs, down lights and ceiling lights, as well as street light and floodlight designs.

The TL1L3 series has seven devices with colour temperatures from 2700K to 6500K. Minimum colour rendering index (Ra) ratings of up to 80 contribute to natural looking lighting across all target applications, while a low typical forward voltage (VF) of just 2.85V (at a forward current of 350mA) helps to keep power consumption to a minimum.

TL1L3 LEDs are rated for operating temperatures between -40°C and 100°C and have a maximum power dissipation of 3.4W. They also offer a very low typical thermal resistance Rth(j-s) from LED junction to solderpoint of only 5°C/W.




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