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TSMC rolls out technology platform for IoT, wearables apps

30 Sep 2014

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TSMC launched its first and most comprehensive ultra-low power technology platform aimed at a wide range of applications for the rapidly evolving Internet of Things (IoT) and wearable device markets that require a wide spectrum of technologies.

In this platform, TSMC offers multiple processes to provide significant power reduction benefits for IoT and wearable products and a comprehensive design ecosystem to accelerate time-to-market for customers.

TSMC's ultra-low power process line-up expands from the existing 0.18µ extremely low leakage (0.18eLL) and 90nm ultra-low leakage (90uLL) nodes, and 16nm FinFET technology, to new offerings of 55nm ultra-low power (55ULP), 40ULP and 28ULP, which support processing speeds of up to 1.2GHz.

The wide spectrum of ultra-low power processes from 0.18µ to 16nm FinFET is ideally suited for a variety of smart and power-efficient applications in the IoT and wearable device markets. Radio frequency and embedded Flash memory capabilities are also available in 0.18um to 40nm ultra-low power technologies, enabling system level integration for smaller form factors as well as facilitating wireless connections among IoT products.

Compared with their previous low power generations, TSMC's ultra-low power processes can further reduce operating voltages by 20 per cent to 30 per cent to lower both active power and standby power consumption and enable significant increases in battery life by 2X to 10X when much smaller batteries are demanded in IoT/wearable applications.

"This is the first time in the industry that we offer a comprehensive platform to meet the demands and innovation for the versatile Internet of Things market where ultra-low power and ubiquitous connectivity are most critical," said TSMC President and Co-CEO, Dr. Mark Liu.

One valuable advantage offered by TSMC's ultra-low power technology platform is that customers can leverage TSMC's existing IP ecosystem through the Open Innovation Platform. Designers can easily re-use IPs and libraries built on TSMC's low-power processes for new ultra-low power designs to boost first-silicon success rates and to achieve fast time-to-market product introduction. Some early design engagements with customers using 55ULP, 40ULP and 28ULP nodes are scheduled in 2014 and risk productions are planned in 2015.

"TSMC's new ultra-low power process technology not only reduces power for always-on devices but enables the integration of radios and FLASH delivering a significant performance and efficiency gain for next-generation intelligent products," said Dr. Dipesh Patel, executive vice president and general manager, physical design group, ARM.




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