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GaN transistor integrates two power FETs

06 Oct 2014

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EPC released an enhancement-mode monolithic GaN transistor half bridge that integrates two eGaN power FETs into a single device, eliminating interconnect inductances and the interstitial space needed on the PCB.

Each device within the EPC2100 half-bridge component has a voltage rating of 30V. The upper FET has a typical RDS(on) of 6mΩ, and the lower FET has a typical RDS(on) of 1.5mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimise efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio.

The EPC2100 comes in a chip-scale package for improved switching speed and thermal performance, measuring 6mm x 2.3mm for increased power density.

"As power conversion systems stretch into the multi-megahertz domain, the integration of discrete devices becomes increasingly important for high system efficiency and power density," said Alex Lidow, EPC's co-founder and CEO.

EPC2100 claims increases in efficiency and power density for complete buck converter systems, approaching 93 per cent at 10A, and over 90.5 per cent at 25A when switching at 500kHz and converting from 12V to 1.2V.

EPC also released a development board that contains one EPC2100 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.

The EPC2100 monolithic half-bridge is available at $5.81 each for 1,000-unit orders, while the

EPC9036 development boards are priced at $137.75 each.


EPC2100 circuit diagram. Source: EPC

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