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Toshiba 3D NAND flash touts 256Gbit storage

12 Aug 2015  | Susan Nordyk

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BiCS flash

Toshiba launched a 48-layer BiCS (Bit Cost Scalable) flash memory that can store up to 256Gbits data. The BiCS flash utilises a 3D vertically stacked cell structure and 3bit/cell triple-level cell technology that allows the flash memory more capacity than a conventional 2D NAND flash memory.

BiCS also enhances write/erase reliability endurance and boosts write speeds. The 256Gbit (32GB) device can be used in a myriad of applications, including consumer solid-state drives, smartphones, tablets, memory cards and enterprise SSDs for data centres.

Since announcing the prototype BiCS flash technology in June 2007, Toshiba has continued development towards optimisation for mass production. To meet further growth in the flash memory market in 2016 and beyond, Toshiba is proactively promoting migration to BiCS flash by rolling out a product portfolio that emphasises large-capacity applications, such as solid-state drives.

The company is preparing for mass production of BiCS flash and will be ready for sampling in September in its new Fab2 facility at Yokkaichi, which is currently under construction and will be completed in the first half of 2016.

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